Semiconductor device and method of manufacturing the same

ABSTRACT

The present disclosure provides a semiconductor device. The semiconductor device includes a carrier having a first side and a second side adjacent to the first side. The semiconductor device also includes a first antenna adjacent to the first side and configured to operate at a first frequency and a second antenna adjacent to the second side and configured to operate at a second frequency different from the first frequency. An method of manufacturing a semiconductor device is also provided.

BACKGROUND 1. Field of the Disclosure

The present disclosure generally relates to a semiconductor device and amethod of manufacturing a semiconductor device.

2. Description of the Related Art

To reduce the size and achieve a higher integration of semiconductordevice packages, several packaging solutions, such as Antenna in Package(AiP) and Antenna on Package (AoP) have been developed and implemented.

However, to support the industry's demand for increased electronicfunctionality, the size and/or form factor of the semiconductor devicepackages will inevitably be increased, and some applications may belimited (e.g., in portable devices).

SUMMARY

In some embodiments, a semiconductor device includes a carrier having afirst side and a second side adjacent to the first side. Thesemiconductor device also includes a first antenna adjacent to the firstside and configured to operate at a first frequency and a second antennaadjacent to the second side and configured to operate at a secondfrequency different from the first frequency.

In some embodiments, a semiconductor device includes a first antenna anda connector adjacent to the first antenna and configured to provide anexternal connection. The semiconductor device also includes a secondantenna at least partially under the connector and the first antenna.

In some embodiments, a method of manufacturing semiconductor deviceincludes disposing a supporting element on a first side of a carrier anddisposing a first antenna on the supporting element. The first antennais configured to operate at a first frequency. The method also includesdisposing a second antenna on a second side of the carrier. The secondantenna is configured to operate at a second frequency.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of some embodiments of the present disclosure are bestunderstood from the following detailed description when read with theaccompanying figures. It is noted that various structures may not bedrawn to scale, and dimensions of the various structures may bearbitrarily increased or reduced for clarity of discussion.

FIG. 1A is a cross-sectional view of a semiconductor device, inaccordance with an embodiment of the present disclosure.

FIG. 1B is a top view of a part of a semiconductor device, in accordancewith an embodiment of the present disclosure.

FIG. 2 is a cross-sectional view of a semiconductor device, inaccordance with an embodiment of the present disclosure.

FIG. 3 is a cross-sectional view of a semiconductor device, inaccordance with an embodiment of the present disclosure.

FIG. 4 is a cross-sectional view of a semiconductor device, inaccordance with an embodiment of the present disclosure.

FIG. 5A, FIG. 5B, FIG. 5C, FIG. 5D, FIG. 5E, FIG. 5F, and FIG. 5Gillustrate cross-sectional views in one or more stages of a method ofmanufacturing a semiconductor device in accordance with an embodiment ofthe present disclosure.

FIG. 6A, FIG. 6B, FIG. 6C, FIG. 6D, FIG. 6E, and FIG. 6F illustratecross-sectional views in one or more stages of a method of manufacturinga semiconductor device in accordance with an embodiment of the presentdisclosure.

DETAILED DESCRIPTION

Common reference numerals are used throughout the drawings and thedetailed description to indicate the same or similar components.Embodiments of the present disclosure will be readily understood fromthe following detailed description taken in conjunction with theaccompanying drawings.

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to explain certain aspects of the present disclosure. These are,of course, merely examples and are not intended to be limiting. Forexample, the formation of a first feature over or on a second feature inthe description that follows may include embodiments in which the firstand second features are formed or disposed in direct contact, and mayalso include embodiments in which additional features may be formed ordisposed between the first and second features, such that the first andsecond features may not be in direct contact. In addition, the presentdisclosure may repeat reference numerals and/or letters in the variousexamples. This repetition is for the purpose of simplicity and clarityand does not in itself dictate a relationship between the variousembodiments and/or configurations discussed.

FIG. 1A is a cross-sectional view of a semiconductor device 1, inaccordance with an embodiment of the present disclosure. In someembodiments, the semiconductor device 1 may be or include, for example,an antenna device or an antenna package. In some embodiments, thesemiconductor device 1 may be or include, for example, a wirelessdevice, such as a user equipment (UE), a mobile station, a mobiledevice, an apparatus communicating with the Internet of Things (IoT),etc. In some embodiments, the semiconductor device 1 may be or include aportable device.

Referring to FIG. 1A, the semiconductor device 1 includes a carrier 10,an antenna layer 11, a connector 12, electronic components 13, 14, asupporting element 15, a shielding layer 16, and an antenna module 17.

In some embodiments, the carrier 10 may be or include, for example, asubstrate. In some embodiments, the carrier 10 may be or include, forexample, a printed circuit board, such as a paper-based copper foillaminate, a composite copper foil laminate, or a polymer-impregnatedglass-fiber-based copper foil laminate.

The carrier 10 may have a surface 101 (which may also be referred to asa first side), a surface 102 (which may also be referred to as a secondside) adjacent to the surface 101, and a lateral surface 103 extendingbetween the surface 101 and the surface 102. The surface 102 may beopposite to the surface 101.

In some embodiments, the carrier 10 may include conductive pad(s),trace(s), via(s), layer(s), or other interconnection(s). For example,the carrier 10 may include one or more transmission lines (e.g.,communications cables) and one or more grounding lines and/or groundingplanes. For example, the carrier 10 may include one or more conductivepads (not annotated in the figures) in proximity to, adjacent to, orembedded in and exposed at the surface 101 and/or the surface 102 of thecarrier 10. The carrier 10 may include a solder resist (not annotated inthe figures) on the surface 101 and/or the surface 102 to fully exposeor to expose at least a portion of the conductive pads for electricalconnections.

The antenna layer 11 may be adjacent to or disposed on the surface 102of the carrier 10. The antenna layer 11 may be supported by the carrier10. The antenna layer 11 may be a part of the carrier 10. For example,the antenna layer 11 may include a part of a conductive layer or acircuit layer of the carrier 10. At least a portion of the antenna layer11 may be exposed from the solder resist of the carrier 10.

In some embodiments, the antenna layer 11 may be at least partiallyunder the connector 12 and the antenna module 17. For example, in adirection substantially perpendicular to the surface 101 and/or thesurface 102 of the carrier 10, the antenna layer 11 and the connector 12may be overlapping. For example, in a direction substantiallyperpendicular to the surface 101 and/or the surface 102 of the carrier10, the antenna layer 11 and the antenna module 17 may be overlapping.

In some embodiments, the radiating area of the antenna layer 11 mayinclude a dimension or a width “W1” measured along a directionsubstantially parallel to the surface 101 and/or the surface 102 of thecarrier 10. The radiating area of the antenna layer 11 may be theexposing area of the antenna elements of the antenna layer 11. The widthW1 of the radiating area of the antenna layer 11 may be at leastpartially under the connector 12 and the antenna module 17.

The antenna layer 11 may be configured to radiate and/or receiveelectromagnetic signals, such as radio frequency (RF) signals. In someembodiments, the antenna layer 11 may include an antenna array or anantenna pattern. For example, the antenna layer 11 may include aplurality of antennas (or antenna elements), such as the antennas 11 a 1and 11 a 2. The antenna layer 11 may also include a plurality ofdielectric layers, such as the dielectric layers 11 d 1 and 11 d 2.

In some embodiments, the antennas 11 a 1 and 11 a 2 may be of anysuitable type, such as patch antennas, slot-coupled antenna, stackedpatches, dipoles, monopoles, etc., and may have different orientationsand/or polarizations.

In some embodiments, the antennas 11 a 1 and 11 a 2 may have differentfrequencies (or operating frequencies) or bandwidths (or operatingbandwidths). For example, the antennas 11 a 1 and 11 a 2 may beconfigured to operate at different frequencies. For example, the antenna11 a 1 may have a frequency higher than a frequency of the antenna 11 a2, or vice versa.

In some embodiments, the antennas 11 a 1 and 11 a 2 may each include aconductive material such as a metal or metal alloy. Examples of theconductive material include gold (Au), silver (Ag), copper (Cu),platinum (Pt), Palladium (Pd), other metal(s) or alloy(s), or acombination of two or more thereof.

In some embodiments, the dielectric layer 11 d 1 may be disposed on theantenna 11 a 1. The dielectric layer 11 d 1 may cover the antenna 11 a1. Similarly, the dielectric layer 11 d 2 may be disposed on the antenna11 a 2. The dielectric layer 11 d 2 may cover the antenna 11 a 2. Insome embodiments, the dielectric layer 11 d 1 and the dielectric layer11 d 2 may be connected or continuous. However, in some otherembodiments, the dielectric layer 11 d 1 and the dielectric layer 11 d 2may be physically separated. The dielectric layer 11 d 1 and thedielectric layer 11 d 2 may be elements configured to focuselectromagnetic signals radiated or received by the antenna 11 a 1 andthe antenna 11 a 2.

In some embodiments, the dielectric layer 11 d 1 and the dielectriclayer 11 d 2 may each include pre-impregnated composite fibers(“pre-preg”), Borophosphosilicate Glass (BPSG), silicon oxide, siliconnitride, silicon oxynitride, Undoped Silicate Glass (USG), anycombination thereof, or the like. Examples of a pre-preg may include,but are not limited to, a multi-layer structure formed by stacking orlaminating a number of pre-impregnated materials/sheets. In someembodiments, the dielectric layer 11 d 1 and the dielectric layer 11 d 2may each include a relatively higher dielectric constant (Dk) material.For example, a Dk of the dielectric layer 11 d 1 (or the dielectriclayer 11 d 2) may be between about 18 and about 25. For example, a Dk ofthe dielectric layer 11 d 1 (or the dielectric layer 11 d 2) may begreater than a Dk of the carrier 10. For example, a Dk of the dielectriclayer 11 d 1 (or the dielectric layer 11 d 2) may be greater than a Dkof the supporting element 15. In some embodiments, a dissipation factor(Df) of the dielectric layer 11 d 1 and the dielectric layer 11 d 2 maybe less than about 0.006.

In some embodiments, the dielectric layer 11 d 1 and the dielectriclayer 11 d 2 may each include a dielectric resonator antenna. Thedielectric resonator antenna may be configured to have various shapes.In some arrangements, the electromagnetic signals radiated from theantenna elements may be introduced into the inside of the resonatormaterial and bounce back and forth between the resonator walls, formingstanding waves. In some arrangements, the dielectric resonator antennamay be configured to increase antenna gain, to increase bandwidth,and/or to adjust resonant frequency and impedance of the electromagneticsignals radiated from the antenna elements.

The connector 12 may be adjacent to or disposed on the surface 101 ofthe carrier 10. The connector 12 may be spaced apart from the antennamodule 17. The connector 12 may be spaced apart from the supportingelement 15. The connector 12 may be configured to provide externalconnections. For example, the connector 12 can provide electricalconnections between the semiconductor device 1 and external components(e.g., external circuits or circuit boards). In some embodiments, theconnector 12 may include a conductive pillar, a solder ball, aconductive wire, a board-to-board connector, a connector for HotBarsoldering, a combination thereof, or any other feasible connectors.

The electronic components 13 and 14 may be adjacent to or disposed onthe surface 101 of the carrier 10. The electronic components 13 and 14may be disposed between the surface 101 of the carrier 10 and theantenna module 17. The electronic components 13 and 14 may beelectrically connected to one or more other electrical components (ifany) and to the carrier 10 (e.g., to the interconnection(s)), and theelectrical connection may be attained by way of flip-chip, wire-bondtechniques, metal to metal bonding (such as Cu to Cu bonding), or hybridbonding.

In some embodiments, the electronic component 13 may include a passivedevice such as a resistor, a capacitor, an inductor, or a combinationthereof. In some embodiments, the electronic component 14 may be a chipor a die including a semiconductor substrate, one or more integratedcircuit (IC) devices and one or more overlying interconnectionstructures therein. The IC devices may include active devices such astransistors and/or passive devices such as resistors, capacitors,inductors, or a combination thereof. For example, the electroniccomponent 14 may include a system on chip (SoC). For example, theelectronic component 14 may include a radio frequency integrated circuit(RFIC), an application-specific IC (ASIC), a central processing unit(CPU), a microprocessor unit (MPU), a graphics processing unit (GPU), amicrocontroller unit (MCU), a field-programmable gate array (FPGA), oranother type of IC.

In some embodiments, the electronic components 13 and 14 may be at leastpartially under the antenna module 17. For example, in a directionsubstantially perpendicular to the surface 101 and/or the surface 102 ofthe carrier 10, the electronic component 13 and the antenna module 17may be overlapping. For example, in a direction substantiallyperpendicular to the surface 101 and/or the surface 102 of the carrier10, the electronic component 14 and the antenna module 17 may beoverlapping.

Although there are three electronic components in FIG. 1A, the number ofthe electronic components is not limited thereto. In some embodiments,there may be any number of electronic components depending on designrequirements.

In some embodiments, the supporting element 15 may be formed on thesurface 101 of the carrier 10 to encapsulate the electronic components13 and 14. The connector 12 may be exposed from the supporting element15. In some embodiments, the supporting element 15 may be configured tosupport the antenna module 17. The supporting element 15 may separatethe antenna module 17 from the antenna layer 11.

In some embodiments, the supporting element 15 may include a surface 151facing away from the carrier 10, a surface 152 opposite to the surface151, and multiple lateral surfaces (such as the lateral surfaces 153 and154) extending between the surface 151 and the surface 152. The surface152 may face and contact the carrier 10. The lateral surface 153 mayface the connector 12.

In some embodiments, the lateral surface 153 of the supporting element15 may define an angle “θ” with the surface 101 of the carrier 10. Insome embodiments, the angle θ may be less than about 90 degrees.

In some embodiments, the supporting element 15 may include anencapsulant. In some embodiments, the supporting element 15 may includean epoxy resin having fillers, a molding compound (e.g., an epoxymolding compound or other molding compound), a polyimide, a phenoliccompound or material, a material with a silicone dispersed therein, or acombination thereof. In some embodiments, the supporting element 15 mayinclude a low Dk and low Df dielectric material, such as a materialhaving a dielectric constant approximately equal to and less than 4.0.

In some embodiments, one or more conductive elements 15 v may bedisposed in the supporting element 15. The conductive element 15 v mayextend between the surface 151 and the surface 152. A part of theconductive element 15 v may be exposed from the surface 151. Theconductive element 15 v may be electrically connected between thecarrier 10 and the antenna module 17. The conductive element 15 v mayinclude a conductive pillar or a conductive via.

The shielding layer 16 may be disposed on the supporting element 15. Forexample, the shielding layer 16 may be disposed on the external surfaces(e.g., the surface 151 and the lateral surfaces 153 and 154) of thesupporting element 15. In some embodiments, the shielding layer 16 maydisposed between the supporting element 15 and the antenna module 17.

In some embodiments, the shielding layer 16 may also be disposed on thelateral surface 103 of the carrier 10. In some embodiments, theshielding layer 16 may contact a grounding layer in the carrier 10. Insome embodiments, the shielding layer 16 and the antenna elements (e.g.,the antenna 11 a 1 and the antenna 11 a 2) may be non-overlapping in adirection substantially parallel to the surface 101 and/or the surface102 of the carrier 10. For example, in a direction substantiallyparallel to the surface 101 and/or the surface 102 of the carrier 10,the antenna elements (e.g., the antenna 11 a 1 and the antenna 11 a 2)may not be covered by the shielding layer 16.

In some embodiments, the shielding layer 16 may be configured to providean electromagnetic interference (EMI) shielding protection. For example,the shielding layer 16 may be configured to provide an EMI shielding toprevent the electronic component 14 from being interfered with by otherelectronic components, and vice versa.

In some embodiments, the shielding layer 16 may define one or moreopenings 16 h over the surface 151 of the supporting element 15. A partof the conductive element 15 v may be exposed from the opening 16 h.

In some embodiments, the shielding layer 16 may include copper (Cu) orother conductive materials, such as aluminum (Al), chromium (Cr), tin(Sn), gold (Au), silver (Ag), nickel (Ni) or stainless steel, anothermetal, or a mixture, an alloy, or other combinations of two or morethereof. In some embodiments, the shielding layer 16 may be or include aconductive layer or a conductive thin film. In some embodiments, theshielding layer 16 may be implemented using a conformal molding with asputtered shield (such as shown in FIG. 5F and FIG. 6E). In someembodiments, the shielding layer 16 may be or include a multi-layeredstructure. For example, layers of the shielding layer 16 from the insideto the outside may include a seed layer (such as porous stainless steel,SUS), a conductive layer (such as Cu), and a protection layer (such asSUS).

The antenna module 17 may be adjacent to or disposed on the surface 101of the carrier 10. The antenna module 17 may be adjacent to or disposedon the surface 151 of the supporting element 15. The antenna module 17may be supported by the carrier 10 and the supporting element 15. Theantenna module 17 may be separated from the antenna layer 11 by thecarrier 10 and the supporting element 15.

At least a part of the antenna module 17 may be over the antenna layer11. For example, in a direction substantially perpendicular to thesurface 101 and/or the surface 102 of the carrier 10, the antenna module17 and the antenna layer 11 may be overlapping. For example, in adirection substantially perpendicular to the surface 101 and/or thesurface 102 of the carrier 10, a part of the antenna layer 11 may becovered by the antenna module 17 and a part of the antenna layer 11 maybe exposed from the antenna module 17.

The antenna module 17 may be electrically connected to the carrier 10through conductive elements 17 e. For example, the conductive elements17 e may comprise solder balls, solder bumps, copper bumps, gold bumps,or any suitable conductive means.

The antenna module 17 may be configured to radiate and/or receiveelectromagnetic signals different from the electromagnetic signals ofthe antenna layer 11. In some embodiments, the antenna module 17 and theantenna layer 11 may have different frequencies (or operatingfrequencies) or bandwidths (or operating bandwidths). For example, theantenna module 17 and the antenna layer 11 may be configured to operateat different frequencies. For example, the antenna module 17 may have afrequency higher than a frequency of the antenna layer 11. In someembodiments, the antenna module 17 may support fifth generation (5G)communications, such as Sub-6 GHz frequency bands and/or millimeter (mm)wave frequency bands. For example, the antenna module 17 may incorporateboth Sub-6 GHz antennas and mm wave antennas. In some embodiments, theantenna module 17 may support beyond-5G or 6G communications, such astetrahertz (THz) frequency bands.

The antenna module 17 may include a carrier 17 d, one or more conductiveelements 17 v, and a plurality of antennas (or antenna elements), suchas the antennas 17 a 1 and 17 a 2.

The carrier 17 d may be a substrate, such as a ceramic substrate, asemiconductor substrate, a dielectric substrate, a glass substrate, etc.The conductive element 17 v may extend through the carrier 17 d to routesignals from one side of the carrier 17 d to the other side of thecarrier 17 d. The conductive element 17 v may include a conductivepillar or a conductive via.

The plurality of antennas (including the antennas 17 a 1 and 17 a 2) ofthe antenna module 17 may be disposed on a surface of the carrier 17 dfacing away from the carrier 10. The antennas of the antenna module 17may be arranged in an array or define an antenna pattern. In someembodiments, the antennas of the antenna module 17 may be of anysuitable type, such as patch antennas, slot-coupled antenna, stackedpatches, dipoles, monopoles, etc., and may have different orientationsand/or polarizations.

In some embodiments, the antenna module 17 may include a multiple-bandantenna module. For example, the antennas 17 a 1 and 17 a 2 may havedifferent frequencies (or operating frequencies) or bandwidths (oroperating bandwidths). For example, the antennas 17 a 1 and 17 a 2 maybe configured to operate at different frequencies. For example, theantenna 17 a 1 may have a frequency higher than a frequency of theantenna 17 a 2, or vice versa.

In some embodiments, the conductive elements 15 v, 17 e, and 17 v may befeeding elements for transmitting incoming/outgoing RF signals withrespect to the antennas of the antenna module 17. By using theconductive element 15 v, which penetrates through the supporting element15 as a feeding element, for the higher-band antenna (such as theantennas of the antenna module 17), the electromagnetic waves maypropagate through a single dielectric layer (the supporting element 15may include a low Dk and low Df dielectric material), and thetransmission losses of the electromagnetic waves may be decreased.

According to some embodiments of the present disclosure, by arranging ahigher-band antenna (such as the antennas of the antenna module 17) anda lower-band antenna (such as the antennas of the antenna layer 11) onopposite sides of the carrier 10, more antennas may be incorporated inthe semiconductor device 1 without increasing the size and/or formfactor of the semiconductor device 1.

In addition, the antenna module 17 and the antenna layer 11 may bothinclude antennas configured to operate at different frequencies. Theantennas on both sides may be laterally arranged or vertically arrangedbased on design requirements.

FIG. 1B is a top view of a part of a semiconductor device, in accordancewith an embodiment of the present disclosure. In some embodiments, thetop view of FIG. 1B may be a top view of a part of the semiconductordevice 1 of FIG. 1A.

The plurality of antennas (including the antennas 17 a 1 and 17 a 2) ofthe antenna module 17 may be disposed on a surface of the carrier 17 d.The size or the surface area of antenna 17 a 1 may be greater than thesize or the surface area of antenna 17 a 2. The antenna 17 a 2 may havea frequency higher than a frequency of the antenna 17 a 1. The antennas17 a 1 and 17 a 2 may be arranged in a staggered manner. The antennas 17a 1 and 17 a 2 may be laterally spaced from each other.

FIG. 2 is a cross-sectional view of a semiconductor device 2, inaccordance with an embodiment of the present disclosure. Thesemiconductor device 2 is similar to the semiconductor device 1 as shownin FIG. 1A, and the differences therebetween are described below.

In comparison with the antennas 11 a 1 and 11 a 2 (laterally arranged)in semiconductor device 1, the semiconductor device 2 may include anantenna 20 a 1 and an antenna 20 a 2 vertically spaced apart from eachother. For example, the antenna 20 a 1 and the antenna 20 a 2 may bepartially overlapping in a direction perpendicular to the surfaces 101and/or 102 of the carrier 10. The antenna 20 a 2 may have a frequencyhigher than a frequency of the antenna 20 a 1. For example, the antenna20 a 2 (which can be referred to as a high-band antenna) may beconfigured to operate in a frequency between about 30 GHz and about 40Ghz. For example, the antenna 20 a 1 (which can be referred to as alow-band antenna) may be configured to operate in a frequency betweenabout 20 GHz and about 30 Ghz.

According to some embodiments of the present disclosure, by arrangingthe antenna 20 a 1 and the antenna 20 a 2 vertically (in a z-axisorientation), a dimension or a width “W2” of the antennas in thexy-plane may be shorter than the width W1 of the radiating area of theantenna layer 11 in semiconductor device 1.

In some other embodiments, the antenna 20 a 2 and the antenna 20 a 1 maynot be overlapping in a direction perpendicular to the surfaces 101and/or 102 of the carrier 10. For example, the antenna 20 a 2 and theantenna 20 a 1 may be arranged along a direction parallel to thesurfaces 101 and/or 102 of the carrier 10. For example, the antenna 20 a2 and the antenna 20 a 1 may be laterally spaced apart from each otherin a direction parallel to the surfaces 101 and/or 102 of the carrier10.

In some embodiments, the semiconductor device may have a dielectriclayer (which can be referred to as a high-Dk dielectric layer) coveringthe antenna 20 a 2 (i.e., the high-band antenna) and a dielectric layer(which can be referred to as a low-Dk dielectric layer) covering theantenna 20 a 1 (i.e., the low-band antenna). The high-Dk dielectriclayer and the low-Dk dielectric layer may respectively be sized as perthe antenna 20 a 2 and the antenna 20 a 1.

The high-Dk dielectric layer and the low-Dk dielectric layer may havedifferent dielectric constants (Dk). For example, the high-Dk dielectriclayer may include a material having a relatively higher Dk (e.g.,between about 18 and about 25) and the low-Dk dielectric layer mayinclude a material having a relatively higher Dk (e.g., between about 18and about 22). In some embodiments, a Df of the high-Dk dielectric layerand a Df of the low-Dk dielectric layer may each be less than about0.006.

FIG. 3 is a cross-sectional view of a semiconductor device 3, inaccordance with an embodiment of the present disclosure. Thesemiconductor device 3 is similar to the semiconductor device 1 as shownin FIG. 1A, and the differences therebetween are described below.

The semiconductor device 3 may include an interposer connection. Thesemiconductor device 3 may include one or more connectors 30 and one ormore conductive elements 30 e. The connector 30 and the conductiveelement 30 e may be configured to provide external connections. Forexample, the connector 30 and the conductive element 30 e can provideelectrical connections between the semiconductor device 3 and externalcomponents (e.g., external circuits or circuit boards).

In some embodiments, the connector 30 may include a conductive pillarand the conductive element 30 e may include a solder ball. The connector30 may penetrate through the supporting element 15. A part of theconnector 30 may be exposed from the opening 16 h. The conductiveelement 30 e may be disposed on the connector 30.

FIG. 4 is a cross-sectional view of a semiconductor device 4, inaccordance with an embodiment of the present disclosure. Thesemiconductor device 4 is similar to the semiconductor device 1 as shownin FIG. 1A, and the differences therebetween are described below.

The semiconductor device 4 includes an antenna module 40 adjacent to ordisposed on the surface 102 of the carrier 10.

The antenna module 40 may be electrically connected to the carrier 10through conductive elements 40 e. For example, the conductive elements40 e may comprise solder balls, solder bumps, copper bumps, gold bumps,or any suitable conductive means.

The antenna module 40 may be configured to radiate and/or receiveelectromagnetic signals different from the electromagnetic signals ofthe antenna module 17. The antenna module 40 may include a carrier 40 d,one or more conductive elements 40 v, and a plurality of antennas (orantenna elements), such as the antennas 40 a 1 and 40 a 2.

By using two antenna modules 17 and 40, the carrier 10 of thesemiconductor device 4 may exclude other antennas. The antennas aredisposed outside the carrier 10. The carrier 10 and the antenna modules17 and 40 may be separately manufactured. The carrier 10 and the antennamodules 17 and 40 may be manufactured with materials, structures, and/orprocesses that may be relatively optimal for the semiconductor device 4.

FIG. 5A, FIG. 5B, FIG. 5C, FIG. 5D, FIG. 5E, FIG. 5F, and FIG. 5Gillustrate cross-sectional views in one or more stages of a method ofmanufacturing a semiconductor device in accordance with an embodiment ofthe present disclosure. At least some of these figures have beensimplified to better understand the aspects of the present disclosure.In some embodiments, the semiconductor device 1 may be manufacturedthrough the operations described with respect to FIG. 5A, FIG. 5B, FIG.5C, FIG. 5D, FIG. 5E, FIG. 5F, and FIG. 5G.

Referring to FIG. 5A, the carrier 10 is provided. The carrier 10 mayhave the surface 101 and the surface 102 opposite to the surface 101.The antennas 11 a 1 and 11 a 2 may be adjacent to or disposed on thesurface 102 of the carrier 10.

In the present embodiment, the carrier 10 may include a copper cladlaminate (CCL) substrate, which includes several carrier units whereinone may be separable from another by a scribe line (not shown). Sinceeach of the carrier units is subjected to similar or identical processesin the manufacturing method, for convenience, only one exemplary carrierunit is detailedly described as follows.

Referring to FIG. 5B, the connector 12, the electronic components 13 and14, and the conductive element 15 v are disposed on the surface 101 ofthe carrier 10.

Referring to FIG. 5C, the supporting element 15 is formed on the surface101 of the carrier 10 to cover or encapsulate the electronic components13 and 14, and the conductive element 15 v. In some embodiments, thesupporting element 15 may be formed by a molding technique, such astransfer molding or compression molding. The supporting element 15 mayhave a surface 151′.

Referring to FIG. 5D, the dielectric layers 11 d 1 and 11 d 2 aredisposed on the antennas 11 a 1 and 11 a 2. The dielectric layers 11 d 1and 11 d 2 may be formed through, for example, a lamination operation.

Referring to FIG. 5E, a part of the supporting element 15 may be removedto expose the conductive element 15 v. The supporting element 15 may bepartially removed through, for example, a grinding operation. Thesupporting element 15 may have a new surface 151.

Referring to FIG. 5F, the shielding layer 16 is disposed on the exposedsurfaces of the supporting element 15. The shielding layer 16 may bedisposed on the lateral surface 103 of the carrier 10. The shieldinglayer 16 may contact the grounding layer of the carrier 10.

In some embodiments, the shielding layer 16 may be disposed through, forexample, physical vapor deposition (PVD), such as sputtering or spraycoating. In some embodiments, the shielding layer may be disposedthrough chemical vapor deposition (CVD) or plating.

One or more openings 16 h may be formed in the shielding layer 16 toexpose the conductive element 15 v.

Referring to FIG. 5G, the antenna module 17 is disposed on thesupporting element 15. The antenna module 17 may be electricallyconnected to the conductive element 15 v and the carrier 10 through theconductive elements 17 e.

FIG. 6A, FIG. 6B, FIG. 6C, FIG. 6D, FIG. 6E, and FIG. 6F illustratecross-sectional views in one or more stages of a method of manufacturinga semiconductor device in accordance with an embodiment of the presentdisclosure. At least some of these figures have been simplified tobetter understand the aspects of the present disclosure. In someembodiments, the semiconductor device 3 may be manufactured through theoperations described with respect to FIG. 6A, FIG. 6B, FIG. 6C, FIG. 6D,FIG. 6E, and FIG. 6F.

Referring to FIG. 6A, the operation thereof may be subsequent to theoperation of FIG. 5A. The connectors 30, the electronic components 13and 14, and the conductive element 15 v are disposed on the surface 101of the carrier 10.

Referring to FIG. 6B, the supporting element 15 is formed on the surface101 of the carrier 10 to cover or encapsulate the connectors 30, theelectronic components 13 and 14, and the conductive element 15 v. Insome embodiments, the supporting element 15 may be formed by a moldingtechnique, such as transfer molding or compression molding. Thesupporting element 15 may have a surface 151′.

Referring to FIG. 6C, the dielectric layers 11 d 1 and 11 d 2 aredisposed on the antennas 11 a 1 and 11 a 2. The dielectric layers 11 d 1and 11 d 2 may be formed through, for example, a lamination operation.

Referring to FIG. 6D, a part of the supporting element 15 may be removedto expose the connectors 30 and the conductive element 15 v. Thesupporting element 15 may be partially removed through, for example, agrinding operation. The supporting element 15 may have a new surface151.

Referring to FIG. 6E, the shielding layer 16 is disposed on the exposedsurfaces of the supporting element 15. The shielding layer 16 may bedisposed on the lateral surface 103 of the carrier 10. The shieldinglayer 16 may contact the grounding layer of the carrier 10. One or moreopenings 16 h may be formed in the shielding layer 16 to expose theconnectors 30 and the conductive element 15 v.

Referring to FIG. 6F, the antenna module 17 is disposed on thesupporting element 15. The antenna module 17 may be electricallyconnected to the conductive element 15 v and the carrier 10 through theconductive elements 17 e.

Spatial descriptions, such as “above,” “below,” “up,” “left,” “right,”“down,” “top,” “bottom,” “vertical,” “horizontal,” “side,” “higher,”“lower,” “upper,” “over,” “under,” and so forth, are indicated withrespect to the orientation shown in the figures unless otherwisespecified. It should be understood that the spatial descriptions usedherein are for purposes of illustration only, and that practicalimplementations of the structures described herein can be spatiallyarranged in any orientation or manner, provided that the merits ofembodiments of this disclosure are not deviated from by such anarrangement.

As used herein, the terms “approximately,” “substantially,”“substantial” and “about” are used to describe and account for smallvariations. When used in conjunction with an event or circumstance, theterms can refer to instances in which the event or circumstance occursprecisely as well as instances in which the event or circumstance occursto a close approximation. For example, when used in conjunction with anumerical value, the terms can refer to a range of variation less thanor equal to ±10% of that numerical value, such as less than or equal to±5%, less than or equal to ±4%, less than or equal to ±3%, less than orequal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%,less than or equal to ±0.1%, or less than or equal to ±0.05%. Forexample, two numerical values can be deemed to be “substantially” thesame or equal if a difference between the values is less than or equalto ±10% of an average of the values, such as less than or equal to ±5%,less than or equal to ±4%, less than or equal to ±3%, less than or equalto ±2%, less than or equal to ±1%, less than or equal to ±0.5%, lessthan or equal to ±0.1%, or less than or equal to ±0.05%.

Two surfaces can be deemed to be coplanar or substantially coplanar if adisplacement between the two surfaces is no greater than 5 μm, nogreater than 2 μm, no greater than 1 μm, or no greater than 0.5 μm.

As used herein, the singular terms “a,” “an,” and “the” may includeplural referents unless the context clearly dictates otherwise.

As used herein, the terms “conductive,” “electrically conductive” and“electrical conductivity” refer to an ability to transport an electriccurrent. Electrically conductive materials typically indicate thosematerials that exhibit little or no opposition to the flow of anelectric current. One measure of electrical conductivity is Siemens permeter (S/m). Typically, an electrically conductive material is onehaving conductivity greater than approximately 104 S/m, such as at least105 S/m or at least 106 S/m. The electrical conductivity of a materialcan sometimes vary with temperature. Unless otherwise specified, theelectrical conductivity of a material is measured at room temperature.

Additionally, amounts, ratios, and other numerical values are sometimespresented herein in a range format. It is to be understood that suchrange format is used for convenience and brevity and should beunderstood flexibly to include numerical values explicitly specified aslimits of a range, but also to include all individual numerical valuesor sub-ranges encompassed within that range as if each numerical valueand sub-range is explicitly specified.

While the present disclosure has been described and illustrated withreference to specific embodiments thereof, these descriptions andillustrations are not limiting. It should be understood by those skilledin the art that various changes may be made and equivalents may besubstituted without departing from the true spirit and scope of thepresent disclosure as defined by the appended claims. The illustrationsmay not be necessarily drawn to scale. There may be distinctions betweenthe artistic renditions in the present disclosure and the actualapparatus due to manufacturing processes and tolerances. There may beother embodiments of the present disclosure which are not specificallyillustrated. The specification and drawings are to be regarded asillustrative rather than restrictive. Modifications may be made to adapta particular situation, material, composition of matter, method, orprocess to the objective, spirit and scope of the present disclosure.All such modifications are intended to be within the scope of the claimsappended hereto. While the methods disclosed herein have been describedwith reference to particular operations performed in a particular order,it will be understood that these operations may be combined,sub-divided, or re-ordered to form an equivalent method withoutdeparting from the teachings of the present disclosure. Accordingly,unless specifically indicated herein, the order and grouping of theoperations are not limitations of the present disclosure.

What is claimed is:
 1. A semiconductor device, comprising: a carrierhaving a first side and a second side adjacent to the first side; afirst antenna adjacent to the first side and configured to operate at afirst frequency; and a second antenna adjacent to the second side andconfigured to operate at a second frequency different from the firstfrequency.
 2. The semiconductor device of claim 1, further comprising: athird antenna adjacent to the first antenna and configured to operate ata third frequency different from the first frequency.
 3. Thesemiconductor device of claim 2, wherein the third frequency is greaterthan the second frequency of the second antenna.
 4. The semiconductordevice of claim 1, further comprising: a fourth antenna adjacent to thesecond antenna and configured to operate at a fourth frequency differentfrom the second frequency.
 5. The semiconductor device of claim 1,further comprising: an electronic component disposed between the firstside of the carrier and the first antenna, and wherein the electroniccomponent is electrically connected with the first antenna and thesecond antenna.
 6. The semiconductor device of claim 5, furthercomprising: a supporting element covering the electronic component andconfigured to support the first antenna, wherein the supporting elementseparates the electronic component from the first antenna.
 7. Thesemiconductor device of claim 6, further comprising: a connectordisposed on the first side of the carrier and exposed from thesupporting element.
 8. The semiconductor device of claim 1, wherein thefirst side of the carrier is opposite to the second side of the carrier.9. The semiconductor device of claim 1, wherein the second antennacomprises a first part covered by the first antenna and a second partexposed from the first antenna.
 10. The semiconductor device of claim 9,further comprising: a connector disposed over the second part of thesecond antenna.
 11. The semiconductor device of claim 10, furthercomprising: an encapsulant separating the carrier from the firstantenna.
 12. The semiconductor device of claim 11, further comprising:an electronic component disposed on the first side of the carrier andencapsulated by the encapsulant, wherein the electronic component iselectrically connected with the connector.
 13. The semiconductor deviceof claim 11, wherein the connector penetrates through the encapsulantand is partially exposed from the encapsulant.
 14. A semiconductordevice, comprising: a first antenna; a connector adjacent to the firstantenna and configured to provide an external connection; and a secondantenna at least partially under the connector and the first antenna.15. The semiconductor device of claim 14, further comprising: anelectronic component disposed between the first antenna and the secondantenna, wherein the electronic component is electrically connected withthe connector.
 16. The semiconductor device of claim 15, furthercomprising: a shielding layer disposed between the electronic componentand the first antenna.
 17. The semiconductor device of claim 14, furthercomprising: a carrier supporting the connector and separating the firstantenna from the second antenna.
 18. The semiconductor device of claim17, further comprising: an encapsulant disposed on the carrier andsupporting the first antenna; and a conductive element penetratingthrough the encapsulant and electrically connecting the carrier to thefirst antenna.
 19. A method of manufacturing a semiconductor device,comprising: disposing a supporting element on a first side of a carrier;disposing a first antenna on the supporting element, wherein the firstantenna is configured to operate at a first frequency; and disposing asecond antenna on a second side of the carrier, wherein the secondantenna is configured to operate at a second frequency.
 20. The methodof claim 19, further comprising: disposing an electronic component onthe first side of the carrier and encapsulated by the supportingelement.